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| BUK7107-40ATC_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET | |||
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NXP Semiconductors
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
Table 6. Characteristics â¦continued
Symbol Parameter
Conditions
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS
internal source
inductance
Source-drain diode
VDS = 30 V; RL = 1.2 â¦; VGS = 10 V;
RG(ext) = 1 kâ¦; Tj = 25 °C
from upper edge of drain mounting base to
centre of die; Tj = 25 °C
from source lead to source bond pad;
Tj = 25 °C
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 19
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
Qr
recovered charge
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
-
2
-
µs
-
5.7 -
µs
-
8.9 -
µs
-
6.8 -
µs
-
2.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
80
-
ns
-
200 -
nC
BUK7107-40ATC_2
Product data sheet
Rev. 02 â 6 February 2009
© NXP B.V. 2009. All rights reserved.
7 of 15
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