BUK7107-40ATC_15 Datasheet, PDF (10/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
120
ID
(A)
100
80
60
40
20
0
0
03ni70
175 °C
Tj = 25 °C
2
4 _{VGS (V)} 6
10
VGS
(V)
8
6
4
2
0
0
03ni71
14 V
VDS = 32 V
40
80 _{QG (nC)} 120
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values
52
VDSR(CL)
(V)
51
50
175 °C
Tj = 25 °C
- 55 °C
03ni61
56
VDSR(CL)
(V)
52
175 °C
Tj = 25 °C
03ni62
- 55 °C
48
44
49
0
2
4
6
8 _{ID (A)} 10
40
0
1
2 _{-IGS(CL) (mA)} 3
Fig 15. Drain-source clamping voltage as a function of Fig 16. Drain-source clamping voltage as a function of
drain current; typical values
gate-source current; typical values
BUK7107-40ATC_2
Product data sheet
Rev. 02 — 6 February 2009
© NXP B.V. 2009. All rights reserved.
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