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| BUK7107-40ATC_15 Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET | |||
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NXP Semiconductors
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
VDGS
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ⥠25 °C; Tj ⤠175 °C;
IDG = 250 µA
Tmb = 25 °C; VGS = 10 V; see Figure 2;
see Figure 3;
IDM
Ptot
IDG(CL)
IGS(CL)
peak drain current
total power dissipation
drain-gate clamping
current
gate-source clamping
current
Visol(FET-TSD) FET to temperature
sense diode isolation
voltage
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
IS
source current
ISM
peak source current
Clamping
EDS(CL)S
non-repetitive
drain-source clamping
energy
Electrostatic Discharge
Vesd
electrostatic discharge
voltage
Tmb = 100 °C; VGS = 10 V; see Figure 2
Tmb = 25 °C; tp ⤠10 µs; pulsed; see Figure 3
Tmb = 25 °C; see Figure 1
pulsed; tp = 5 ms; δ = 0.01
continuous
pulsed; tp = 5 ms; δ = 0.01
Tmb = 25 °C;
Tmb = 25 °C;
tp ⤠10 µs; pulsed; Tmb = 25 °C
ID = 75 A; VDS ⤠40 V; VGS = 10 V; RGS = 10 kâ¦;
unclamped; Tj(init) = 25 °C
HBM; C = 100 pF; R = 1.5 kâ¦
[1] Voltage is limited by clamping.
[2] Current is limited by power dissipation chip rating.
[3] Continuous current is limited by package.
Min
[1] -
-
-20
[2] -
[3] -
[3] -
-
-
-
Max Unit
40
V
40
V
20
V
140 A
75
A
75
A
560 A
272 W
50
mA
-
10
mA
-
50
mA
-100 100 V
-55 175 °C
-55 175 °C
[2] -
[3] -
-
140 A
75
A
560 A
-
1.4 J
-
6
kV
BUK7107-40ATC_2
Product data sheet
Rev. 02 â 6 February 2009
© NXP B.V. 2009. All rights reserved.
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