BUK7107-40ATC_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

BUK7107-40ATC
N-channel TrenchPLUS standard level FET
Rev. 02 — 6 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
clamping and temperature sensing. This product has been designed and qualified to the
appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Allows responsive temperature
monitoring due to integrated
temperature sensor
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
1.3 Applications
„ Electrical Power Assisted Steering
(EPAS)
„ Variable Valve Timing for engines
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C;
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 2; see Figure 3;
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 50 A;
T_j = 25 °C; see Figure 7;
see Figure 8
S_F(TSD)
temperature sense
diode temperature
coefficient
I_F = 250 µA; T_j > -55 °C;
T_j < 175 °C
V_F(TSD)
temperature sense
diode forward
voltage
I_F = 250 µA; T_j = 25 °C
V_F(TSD)hys temperature sense
diode forward
voltage hysteresis
I_F < 250 µA; T_j = 25 °C;
I_F > 125 µA
Min
[1] -
[2] -
-
-1.4
648
25
Typ Max Unit
-
40 V
-
75 A
5.8 7
mΩ
-1.54 -1.68 mV/K
658 668 mV
32 50 mV
[1] Voltage is limited by clamping.
[2] Continuous current is limited by package.