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BUK6212-40C_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET
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NXP Semiconductors
BUK6212-40C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V
Min Typ Max Unit
-
0.9 1.2 V
-
35.6 -
ns
-
38
-
nC
100
ID
(A)
80
60
VGS (V) = 10
8
003aae459
5
4.5
40
4
3.8
20
3.6
3.4
3.2
0
0
0.5
1
1.5
2
VDS (V)
60
gfs
(S)
40
003aae461
20
0
0
10
20
30
40
ID (A)
Fig 5. Output characteristics: drain current as a
Fig 6. Forward transconductance as a function of
function of drain-source voltage; typical values
drain current; typical values
60
ID
(A)
40
003aae460
40
RDSon
(mΩ)
30
003aae464
20
20
Tj = 175 °C
Tj = 25 °C
10
0
0
2
4
6
VGS (V)
0
0
5
10
15
20
VGS (V)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
BUK6212-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 21 September 2010
© NXP B.V. 2010. All rights reserved.
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