BUK6212-40C_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

BUK6212-40C
N-channel TrenchMOS intermediate level FET
Rev. 2 — 21 September 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using TrenchMOS technology. This product has been designed and
qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 AEC Q101 compliant
 Suitable for standard and logic level
gate drive sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V Automotive systems
 Electric and electro-hydraulic power
steering
 Motors, lamps and solenoids
 Start-Stop micro-hybrid applications
 Transmission control
 Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source
T_j ≥ 25 °C; T_j ≤ 175 °C
voltage
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1
P_tot
total power
see Figure 2
dissipation
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 10 V; I_D = 12 A;
T_mb = 25 °C; see Figure 11
Min Typ Max Unit
-
-
40 V
[1]
-
-
50 A
-
-
80 W
-
9.5 11.2 mΩ