BUK6212-40C_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
60
I_D
(1)
(A)
40
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BUK6212-40C
N-channel TrenchMOS intermediate level FET
120
P_der
(%)
80
03aa16
20
40
0
0
50
100
150
200
T_mb ( C)
(1) Capped at 50 A due to package
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
10³
I_D
(A)
10²
10
1
Limit R_DSon = V_DS / I_D
DC
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t_p = 10 μs
100 μs
1 ms
10 ms
100 ms
10^−1
10^−1
1
10
V_DS (V)
10²
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK6212-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 21 September 2010
© NXP B.V. 2010. All rights reserved.
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