BUK1M200-50SGTD Datasheet, PDF (7/15 Pages) NXP Semiconductors – Quad channel logic level TOPFET

Philips Semiconductors
BUK1M200-50SGTD
Quad channel logic level TOPFET
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2.5
500
a
RDSon
2
(mΩ)
375
1.5
250
1
125
0.5
0
-50
0
50
100 _{Tj (°C)} 150
a = -_R---_D----^R_S---_o-^D--_n-^S-₍--_2o--₅-ⁿ--_°--_C----₎
Fig 6. Normalized drain-source on-state resistance
factor as a function of junction temperature.
0
0
2
4
6
8
VIS (V)
T_j = 25 °C; I_D = 100 mA; t_p = 300 µs
Fig 7. Drain-source on-state resistance as a function
of input-source voltage; typical values.
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6
6
5V
4V
ID
3.4 V
(A)
3.2 V
ID
(A)
3V
4
4
2.8 V
2
2.6 V
2
V_IS = 2.2 V
2.4 V
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0
0
2
4
6
8
VDS (V)
0
0
1
2
3
4
VIS (V)
Fig 8. Output characteristics; drain current as a
Fig 9. Transfer characteristics; drain current as a
function of drain-source voltage; typical values.
function of input-source voltage; typical values.
9397 750 10955
Product data
Rev. 01 — 31 March 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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