BUK1M200-50SGTD Datasheet, PDF (4/15 Pages) NXP Semiconductors – Quad channel logic level TOPFET

Philips Semiconductors
BUK1M200-50SGTD
Quad channel logic level TOPFET
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
drain-source voltage
I_D
drain current
I_I
input current
I_IMS
non-repetitive peak input current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Overvoltage clamping ^[6]
T_sp = 25 °C; Figure 5
clamping
t_p ≤ 1 ms
T_sp = 25 °C; Figure 4
normal operation
E_DS(CL)S non-repetitive drain-source clamping energy T_amb = 25 °C; I_DM ≤ I_D(th)(trip); inductive
load
E_DS(CL)R repetitive drain-source clamping energy
Overload protection ^[7]
T_sp ≤ 125 °C; I_DM = 1 A; f = 250 Hz
V_DS(prot) protected drain-source voltage
Reverse diode
V_IS ≥ 4 V
I_S
source (diode forward) current
Electrostatic discharge
T_sp ≤ 25 °C; V_IS = 0 V
V_esd
electrostatic discharge voltage
C = 250 pF; R = 1.5 kΩ
Min Max Unit
[1] _{- 50 V}
[2][3] _{- 2.7 A}
- 3 mA
- 10 mA
[4] _{- 9.4 W}
−55 +150 °C
[5] _{- 150 °C}
[3] _{- 100 mJ}
[3] _-
5
mJ
- 35 V
-2 A
- 2 kV
[1] Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
[2] Refer to overload protection characteristics.in Table 5.
[3] For a single active device.
[4] For all devices active.
[5] Not in an overload condition with drain current limiting.
[6] At a drain-source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
[7] With the protection supply provided via the input pin, the TOPFET is protected from short circuit loads. Overload protection operates by
means of drain current trip or by activating the overtemperature protection.
9397 750 10955
Product data
Rev. 01 — 31 March 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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