BUK1M200-50SGTD Datasheet, PDF (10/15 Pages) NXP Semiconductors – Quad channel logic level TOPFET

Philips Semiconductors
BUK1M200-50SGTD
Quad channel logic level TOPFET
400
ID
(mA)
300
200
100
03pa83
10-5
IDSS
(A)
10-6
10-7
03pa84
0
57
59
61
63
65
67
VDS (V)
V_IS = 0 V; t_p = 300 µs
Fig 18. Overvoltage clamping characteristic; drain
current as a function of drain-source voltage;
typical values.
10-8
-50
0
50
100 _{Tj (°C)} 150
V_DS = 40 V; V_IS = 0 V
Fig 19. Drain-source leakage current as a function of
junction temperature; typical values.
9397 750 10955
Product data
Rev. 01 — 31 March 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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