BUJD105AD_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – NPN power transistor with integrated diode

NXP Semiconductors
10²
h_FE
T_j = 100 °C
25 °C
10
−40 °C
001aac046
BUJD105AD
NPN power transistor with integrated diode
V_IM
0
t_p
T
V_CC
R_L
R_B
DUT
001aab989
1
10^−2
10^−1
1
10
I_C (A)
Fig 10. DC current gain as a function of collector
current; typical values
Fig 11. Test circuit for resistive load switching
I_C
90 %
I_Con
90 %
I_B
t_on
t_s
t_off
I_Bon
10 %
t
t_f
10 %
t_r ≤ 30 ns
−I_Boff
t
001aab990
Fig 12. Switching times waveforms for resistive load
I_Bon
V_BB
V_CC
L_C
L_B
DUT
001aab991
Fig 13. Test circuit for inductive load switching
BUJD105AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 29 July 2010
© NXP B.V. 2010. All rights reserved.
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