BUJD105AD_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – NPN power transistor with integrated diode

NXP Semiconductors
10
I_C
(A)
8
6
4
2
0
0
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V_BB = −5 V
−3 V
−1 V
200
400
600
800
V_CEclamp (V)
BUJD105AD
NPN power transistor with integrated diode
V_CC
L_C
V_CL(CE)
probe point
I_Bon
L_B
V_BB
DUT
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Fig 1. Reverse bias safe operating area
120
P_der
(%)
80
Fig 2. Test circuit for reverse bias safe operating area
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40
0
0
40
80
120
160
T_mb (°C)
Fig 3. Normalized total power dissipation as a function of mounting base temperature
BUJD105AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 29 July 2010
© NXP B.V. 2010. All rights reserved.
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