BUJD105AD_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – NPN power transistor with integrated diode

NXP Semiconductors
BUJD105AD
NPN power transistor with integrated diode
2.0
V_CEsat
(V)
I_C = 1 A 2 A 3 A 4 A
1.6
001aab995
1.2
0.8
0.4
0
10^−2
10^−1
1
10
I_B (A)
0.6
V_CEsat
(V)
0.4
0.2
0
10^−1
001aac048
T_j = 100 °C
25 °C
−40 °C
1
10
I_C (A)
Fig 6. Collector-emitter saturation voltage as a
function of base current; typical values
1.3
V_BEsat
(V)
1.1
001aac047
0.9 T_j = −40 °C
25 °C
0.7
100 °C
0.5
10^−1
1
10
I_C (A)
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
10²
001aac045
h_FE
T_j = 100 °C
25 °C
10
−40 °C
1
10^−2
10^−1
1
10
I_C (A)
Fig 8. Base-emitter saturation voltage as a function of Fig 9. DC current gain as a function of collector
collector current; typical values
current; typical values
BUJD105AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 29 July 2010
© NXP B.V. 2010. All rights reserved.
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