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BUJD105AD_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – NPN power transistor with integrated diode
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NXP Semiconductors
BUJD105AD
NPN power transistor with integrated diode
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 5
printed-circuit-board mounted;
minimum footprint; see Figure 4
Min Typ Max Unit
-
-
1.56 K/W
-
75
-
K/W
7.0
7.0
2.15
2.5
1.5
4.57
001aab021
Fig 4. Minimum footprint SOT428
001aab998
10
Zth(j-mb)
(K/W)
1 δ = 0.5
10−1
0.2
0.1
0.05
0.02
0.01
Ptot
tp
δ=
T
10−2
10−5
10−4
10−3
10−2
10−1
tp
t
T
1
10
tp (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse width
BUJD105AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 29 July 2010
© NXP B.V. 2010. All rights reserved.
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