BUJ303AX_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – NPN power transistor

NXP Semiconductors
BUJ303AX
NPN power transistor
0.5
V_CEsat
(V)
0.4
0.3
0.2
0.1
0
10^-1
003aag032
1
10
I_C (A)
2.0
V_CEsat
(V)
I_C = 1 A 2 A 3 A
4A
1.6
003aag031
1.2
0.8
0.4
0
10^-2
10^-1
1
10
I_B (A)
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
1.4
V_BEsat
(V)
1.2
1.0
0.8
0.6
0.4
0.2
0
10^-1
003aag033
1
10
I_C (A)
Fig 9. Collector-emitter saturation voltage as a
function of base current; typical values
10²
003aag034
h_FE
V_CE = 5 V
10
1
10^-2
10^-1
1V
1
10
I_C (A)
Fig 10. Base-emitter saturation voltage as a function of Fig 11. DC current gain as a function of collector
collector current; typical values
current; typical values
BUJ303AX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 8 February 2012
© NXP B.V. 2012. All rights reserved.
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