BUJ303AX_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – NPN power transistor

NXP Semiconductors
BUJ303AX
NPN power transistor
Table 7. Characteristics …continued
Symbol
Parameter
Conditions
Dynamic Characteristics (switching times - inductive load)
t_s
turn-off delay time
I_C = 2.5 A; I_Bon = 0.5 A; V_BB = -5 V;
L_B = 1 µH; T_h = 25 °C; see Figure 14;
see Figure 15
t_s
turn-off delay time
I_C = 2.5 A; I_Bon = 0.5 A; V_BB = -5 V;
L_B = 1 µH; T_h = 100 °C; see Figure 14;
see Figure 15
t_r
rise time
I_C = 2.5 A; I_Bon = 0.5 A; V_BB = -5 V;
L_B = 1 µH; T_h = 25 °C; see Figure 14;
see Figure 15
I_C = 2.5 A; I_Bon = 0.5 A; V_BB = -5 V;
L_B = 1 µH; T_h = 100 °C; see Figure 14;
see Figure 15
Min Typ Max Unit
-
1.4 1.6 µs
-
1.7 1.9 µs
-
145 160 ns
-
160 200 ns
6V
30 Hz to 60 Hz
300 Ω
50 V
100 Ω to 200 Ω
horizontal
oscilloscope
vertical
1Ω
001aab987
Fig 6. Test circuit for collector-emitter sustaining
voltage
I_C
(mA)
250
100
10
0
min _{VCE (V)}
V_CEOsus
001aab988
Fig 7. Oscilloscope display for collector-emitter
sustaining voltage test waveform
BUJ303AX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 8 February 2012
© NXP B.V. 2012. All rights reserved.
6 of 13