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| BUJ303AX_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – NPN power transistor | |||
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NXP Semiconductors
BUJ303AX
NPN power transistor
102
IC
(A)
ICMm1a0x
ICmax
1
003aag029
duty cycle = 0.01
II(3)
tp = 10 μs
(1)
100 μs
10-1
(2)
1 ms
I(3)
10 ms
DC
Fig 4.
10-2
1
III(3)
10
102
103
VCEclamp (V)
(1) Ptot maximum and Ptot peak maximum lines.
(2) Second breakdown limits.
(3) I = Region of permissible DC operation.
II = Extension for repetitive pulse operation.
III = Extension during turn-on in single transistor converters provided that RBE ⤠100 ⦠and tp ⤠0.6 μs.
Forward bias safe operating area for Tmb ⤠25 °C
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Rth(j-h)
thermal resistance from junction to heatsink with heatsink compound; -
-
3.95 K/W
see Figure 5
Rth(j-a)
thermal resistance from junction to ambient in free air
-
55 -
K/W
10
Zth(j-h)
(K/W)
1
10-1
δ = 0.5
0.2
0.1
0.05
0.02
10-2
0
003aag067
Ptot
δ = tp
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
tp
t
T
10
tp (s) 102
Fig 5. Transient thermal impedance from junction to heatsink as a function of pulse duration
BUJ303AX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 â 8 February 2012
© NXP B.V. 2012. All rights reserved.
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