BUJ303AX_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – NPN power transistor

NXP Semiconductors
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
B
base
C
collector
E
emitter
n.c.
mounting base; isolated
Simplified outline
mb
BUJ303AX
NPN power transistor
Graphic symbol
C
B
E
sym123
3. Ordering information
123
SOT186A (TO-220F)
Table 3. Ordering information
Type number
Package
Name
BUJ303AX
TO-220F
4. Limiting values
Description
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_CESM
V_CEO
I_C
I_CM
I_B
I_BM
P_tot
T_stg
T_j
collector-emitter peak voltage
collector-emitter voltage
collector current
peak collector current
base current
peak base current
total power dissipation
storage temperature
junction temperature
V_BE = 0 V
I_B = 0 A
see Figure 1; see Figure 2; see Figure 4
DC
T_h ≤ 25 °C; see Figure 3
Min Max Unit
-
1000 V
-
500 V
-
5
A
-
10 A
-
2
A
-
4
A
-
32 W
-65 150 °C
-
150 °C
BUJ303AX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 8 February 2012
© NXP B.V. 2012. All rights reserved.
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