BU506F Datasheet, PDF (7/12 Pages) NXP Semiconductors – Silicon diffused power transistors

Philips Semiconductors
Silicon diffused power transistors
Product specification
BU506F; BU506DF
handbook, h²alfpage
VCEsat
(V)
1
MGB886
1.2
handbook, halfpage
VBEsat
(V)
0.8
0.4
MGB901
(1)
(2)
(3)
0
10^−2
10^−1
1
IC (A) ¹⁰
I_C/I_B = 2; T_j = 25 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
0
0
1
T_j = 25 °C.
(1) I_C = 3 A.
(2) I_C = 2 A.
(3) I_C = 1 A.
2
IB (A)
3
Fig.9 Base-emitter saturation voltage as a
function of base current; typical values.
10²
handbook, halfpage
hFE
10
MGB877
1
10^−2
10^−1
1
IC (A) ¹⁰
handbook, halfpage
iC
ICsat
iB
ts
MBH382
90%
10%
time
tf
IB _(end)
time
V_CE = 5 V; T_j = 25 °C.
Fig.10 DC current gain; typical values.
1997 Aug 14
6
Fig.11 Switching time waveforms.