BU506F Datasheet, PDF (3/12 Pages) NXP Semiconductors – Silicon diffused power transistors

Philips Semiconductors
Silicon diffused power transistors
Product specification
BU506F; BU506DF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CESM
V_CEO
I_Csat
I_C
I_CM
I_B
I_BM
P_tot
T_stg
T_j
collector-emitter peak voltage
collector-emitter voltage
collector saturation current
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
V_BE = 0
open base
V_CE = 5 V
see Figs 2 and 3
see Figs 2 and 3
T_h ≤ 25 °C; see Fig.4
MIN.
−
−
−
−
−
−
−
−
−65
−
MAX.
1500
700
3
5
8
3
5
20
+150
150
UNIT
V
V
A
A
A
A
A
W
°C
°C
ISOLATION CHARACTERISTICS
SYMBOL
PARAMETER
V_isolM
C_isol
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
TYP.
−
12
MAX.
1 500
−
UNIT
V
pF
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_CEOsust
V_CEsat
V_BEsat
V_F
I_CES
I_EBO
h_FE
collector-emitter sustaining
voltage
I_C = 100 mA; I_B = 0; L = 25 mH;
see Figs 5 and 6
collector-emitter saturation
voltage
I_C = 3 A; I_B = 1.33 A;
see Figs 7 and 8
base-emitter saturation voltage I_C = 3 A; I_B = 1.33 A; see Fig.9
diode forward voltage (BU506DF) I_F = 3 A
collector-emitter cut-off current V_CE = V_CESmax; V_BE = 0
V_CE = V_CESmax; V_BE = 0;
T_j = 125 °C
emitter-base cut-off current
V_EB = 6 V; I_C = 0
DC current gain
V_CE = 5 V; I_C = 3 A; see Fig.10
V_CE = 5 V; I_C = 100 mA;
see Fig.10
Switching times in horizontal deflection circuit (see Fig.11)
t_s
storage time
t_f
fall time
I_Csat = 3 A; L_B = 12 µH;
I_B(end) = 1 A; dI_B/dt = −0.33 A/µs
I_Csat = 3 A; L_B = 12 µH;
I_B(end) = 1 A; dI_B/dt = −0.33 A/µs
MIN.
700
−
−
−
−
−
−
2.25
6
−
−
TYP.
−
−
−
1.5
−
−
−
−
13
6.5
0.7
MAX. UNIT
−
V
1
V
1.3
V
2.2
V
0.5
mA
1
mA
10
mA
−
30
−
µs
−
µs
1997 Aug 14
2