BU506F Datasheet, PDF (2/12 Pages) NXP Semiconductors – Silicon diffused power transistors

Philips Semiconductors
Silicon diffused power transistors
Product specification
BU506F; BU506DF
DESCRIPTION
High-voltage, high-speed switching
NPN power transistor in a SOT186
package. The BU506DF has an
integrated efficiency diode.
APPLICATIONS
• Horizontal deflection circuits of
colour television receivers
• Line-operated switch-mode
applications.
PINNING
PIN⁽¹⁾
1
2
3
DESCRIPTION
base
collector
emitter
123
Front view
MBC668
2
1
MBB008
3
a. BU506F.
2
1
MBB077
3
b. BU506DF.
Fig.1 Simplified outline (SOT186) and symbols.
Note
1. All pins electrically isolated from mounting base.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CESM
V_CEO
V_CEsat
V_F
I_Csat
I_C
I_CM
P_tot
t_f
collector-emitter peak voltage
collector-emitter voltage
collector-emitter saturation voltage
diode forward voltage (BU506DF)
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
CONDITIONS
V_BE = 0
open base
I_C = 3 A; I_B = 1.33 A; see Figs 7 and 8
I_F = 3 A
see Figs 2 and 3
see Figs 2 and 3
T_h ≤ 25 °C; see Fig.4
inductive load; see Fig.11
TYP.
−
−
−
1.5
−
−
−
−
0.7
MAX.
1 500
700
1
2.2
3
5
8
20
−
UNIT
V
V
V
V
A
A
A
W
µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-h}
R_{th j-a}
thermal resistance from junction to external heatsink note 1
note 2
thermal resistance from junction to ambient
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
VALUE
6.35
3.85
55
UNIT
K/W
K/W
K/W
1997 Aug 14
1