BU506F Datasheet, PDF (4/12 Pages) NXP Semiconductors – Silicon diffused power transistors

Philips Semiconductors
Silicon diffused power transistors
Product specification
BU506F; BU506DF
handbook, full pagewidth
10²
IC
(A)
10 ^ICM max
IC _max
II
1
I
10^−1
10^−2
MGB933
10^−3
10^−4
1
10
10²
10³ _{VCE (V)} 10⁴
Mounted without heatsink compound and 30 ±5 N force on centre of package.
T_mb = 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.2 Forward bias SOAR (no heatsink compound).
1997 Aug 14
3