BFU630F_15 Datasheet, PDF (7/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU630F
NPN wideband silicon RF transistor
50
G
(dB)
40
30
MSG
20
|S21|²
10
G_p(max)
001aam818
MSG
50
G
(dB)
40
MSG
30
20
G_p(max)
|S21|²
10
001aam819
MSG
0
0
5
10
15
20
25
f (GHz)
0
0
5
10
15
20
25
f (GHz)
V_CE = 2 V; I_C = 5 mA; T_amb = 25 C.
V_CE = 2 V; I_C = 15 mA; T_amb = 25 C.
Fig 7. Gain as a function of frequency; typical values Fig 8. Gain as a function of frequency; typical values
2.0
NF_min
(dB)
1.6
1.2
0.8
001aam820
(1)
(2)
(3)
(4)
2.0
NF_min
(dB)
1.5
1.0
001aam821
0.5
0.4
0
0
2
4
6
8
10
I_C (mA)
V_CE = 2 V; T_amb = 25 C.
(1) f = 5.8 GHz
(2) f = 2.4 GHz
(3) f = 1.8 GHz
(4) f = 1.5 GHz
Fig 9. Minimum noise figure as a function of
collector current; typical values
0
0
2
4
6
8
f (GHz)
V_CE = 2 V; I_C = 3 mA; T_amb = 25 C.
Fig 10. Minimum noise figure as a function of
frequency; typical values
BFU630F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 15 December 2010
© NXP B.V. 2010. All rights reserved.
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