BFU630F_15 Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU630F
NPN wideband silicon RF transistor
Table 7. Characteristics …continued
T_j = 25 C unless otherwise specified
Symbol Parameter
IP3
third-order intercept point
Conditions
I_C = 30 mA; V_CE = 2.5 V;
Z_S = Z_L = 50 ; T_amb = 25 C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
[1] G_p(max) is the maximum power gain, if K > 1. If K < 1 then G_p(max) = MSG.
Min Typ Max Unit
- 25.5 -
- 26 -
- 26.5 -
- 27.5 -
dBm
dBm
dBm
dBm
25
I_C
(mA)
20
15
10
5
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(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
0
0
1
2
3
4
5
V_CE (V)
T_amb = 25 C.
(1) I_B = 200 A
(2) I_B = 180 A
(3) I_B = 160 A
(4) I_B = 140 A
(5) I_B = 120 A
(6) I_B = 100 A
(7) I_B = 80 A
(8) I_B = 60 A
(9) I_B = 40 A
(10) I_B = 20 A
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
200
h_FE
150
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100
50
0
0
10
V_CE = 2 V; T_amb = 25 C.
20
30
I_C (mA)
Fig 3. DC current gain as a function of collector
current; typical values
BFU630F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 15 December 2010
© NXP B.V. 2010. All rights reserved.
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