 English |
|
|
|
|
|
|
|
| BFU630F_15 Datasheet, PDF (6/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
| |||
| ◁ |
NXP Semiconductors
BFU630F
NPN wideband silicon RF transistor
80
CCBS
(fF)
60
40
20
001aam815
30
fT
(GHz)
20
10
001aam816
0
0
4
8
12
VCB (V)
Fig 4.
f = 1 MHz, Tamb = 25 ï°C.
Collector-base capacitance as a function of
collector-base voltage; typical values
30
G
(dB)
20
MSG
0
0
10
20
30
40
IC (mA)
Fig 5.
VCE = 2 V; f = 2 GHz; Tamb = 25 ï°C.
Transition frequency as a function of collector
current; typical values
001aam817
(1)
(2)
(3)
(4)
Gp(max)
10
0
0
10
20
30
VCE = 2 V; Tamb = 25 ï°C.
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 5.8 GHz
Fig 6. Gain as a function of collector current; typical value
40
50
IC (mA)
BFU630F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 15 December 2010
© NXP B.V. 2010. All rights reserved.
6 of 12
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese