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BFU630F_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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BFU630F
NPN wideband silicon RF transistor
Rev. 1 â 15 December 2010
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
ï® Low noise high gain microwave transistor
ï® Noise figure (NF) = 0.85 dB at 2.4 GHz
ï® High maximum stable gain 26 dB at 1.8 GHz
ï® 40 GHz fT silicon technology
1.3 Applications
ï® Low noise amplifiers for microwave communications systems
ï® WLAN and CDMA applications
ï® Analog/digital cordless applications
ï® Ku band oscillators DROâs
ï® LNB
ï® RKE
ï® AMR
ï® GPS
ï® ZigBee
ï® LTE, cellular, UMTS
ï® FM radio
ï® Mobile TV
ï® Bluetooth
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