BFT25A Datasheet, PDF (7/11 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFT25A
f
V_CE
I_C
(MHz)
(V)
(mA)
1000
1
1
Noise Parameters
F_min
(dB)
2
Gamma (opt)
(mag) (ang)
0.74 8
R_n/50
2.6
0.5
0.2
1
pot. unst.
region
+j
0
−j
0.2
0.2
0.5
1
MSG
11.2 dB
10 dB
8 dB
2
8 dB
4 dB
3 dB
2
5 10
stability
circle
5
10
∞ _ΓOPT
10 ^{Fmin = 2 dB}
5
0.5
2
1
Z_o = 50 Ω.
Average gain parameter: MSG = 11.2 dB.
Fig.13 Noise circle figure.
MCD109
f
V_CE
I_C
(MHz)
(V)
(mA)
2000
1
1
Noise Parameters
F_min
(dB)
2.4
Gamma (opt)
(mag) (ang)
0.72 26
R_n/50
1.7
pot. unst.
1
region
0.5
MSG
7.7 dB
0.2
7 dB
+j
0
−j
0.2
0.5
1
5 dB
0.2
stability
circle
2
Γ_OPT
Fmin = 2.4 dB
2 3 dB 5 10
4 dB
5
10
∞
10
6 dB
5
December 1997
0.5
2
1
Z_o = 50 Ω.
Average gain parameter: MSG = 7.7 dB.
Fig.14 Noise circle figure.
MCD110
7