BFT25A Datasheet, PDF (6/11 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFT25A
4
handbook, halfpage
F
(dB)
3
2
MCD145
f = 2 GHz
1 GHz
500 MHz
1
0
10^−1
1
10
IC (mA)
V_CE = 1 V.
Fig.10 Minimum noise figure as a function of
collector current.
4
handbook, halfpage
F
(dB)
3
2
1
MCD146
IC = 2 mA
1 mA
0.5 mA
0
10²
10³
10⁴
f (MHz)
V_CE = 1 V.
Fig.11 Minimum noise figure as a function of
frequency.
f
V_CE
I_C
(MHz)
(V)
(mA)
500
1
1
Noise Parameters
F_min
(dB)
1.9
Gamma (opt)
(mag) (ang)
0.79 4
R_n/50
2.5
December 1997
0.2
+j
0
−j
0.2
1
0.5
pot. unst.
region
0.2
0.5
1
MSG
14.5 dB
13 dB
11 dB
2
6 dB
4 dB
2.5 dB
2
5 10
5
stability
circle
10
∞ _ΓOPT
10 ^{Fmin = 1.9 dB}
5
0.5
2
1
Z_o = 50 Ω.
Average gain parameter: MSG = 14.5 dB.
Fig.12 Noise circle figure.
MCD108
6