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BFT25A Datasheet, PDF (5/11 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor
Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFT25A
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
handbook,2h5alfpage
gain
(dB)
20
GUM
MCD104
handbook,2h0alfpage
gain
(dB)
15
GUM
MCD105
15
MSG
10
10
MSG
5
5
0
0
0.5
1.0
VCE = 1 V; f = 500 MHz.
1.5
2.0
IC (mA)
Fig.6 Gain as a function of collector current.
0
0
0.5
1.0
1.5
2.0
IC (mA)
VCE = 1 V; f = 1 GHz.
Fig.7 Gain as a function of collector current.
handbook,5h0alfpage
gain
(dB)
40
G UM
MCD106
30
20
MSG
10
G max
0
10
102
103
104
f (MHz)
VCE = 1 V; Ic = 0.5 mA.
Fig.8 Gain as a function of frequency.
December 1997
handbook,5h0alfpage
gain
(dB)
40
30
20
GUM
MSG
MCD107
10
G max
0
10
102
103
104
f (MHz)
VCE = 1 V; Ic = 1 mA.
Fig.9 Gain as a function of frequency.
5