BFT25A Datasheet, PDF (2/11 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFT25A
FEATURES
• Low current consumption
(100 µA − 1 mA)
• Low noise figure
• Gold metallization ensures
excellent reliability.
PINNING
PIN
DESCRIPTION
Code: V10
1 base
2 emitter
fpage
3 collector
DESCRIPTION
The BFT25A is a silicon npn
transistor, primarily intended for use
in RF low power amplifiers, such as
pocket telephones and paging
systems with signal frequencies up to
2 GHz.
The transistor is encapsulated in a
3-pin plastic SOT23 envelope.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
G_UM
F
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power
gain
noise figure
open emitter
open base
up to T_s = 165 °C;
note 1
I_C = 0.5 mA; V_CE = 1 V
I_C = 1 mA; V_CE = 1 V;
T_amb = 25 °C; f = 500 MHz
I_C = 0.5 mA; V_CE = 1 V;
T_amb = 25 °C; f = 1 GHz
Γ = Γ_opt; I_C = 0.5 mA; V_CE = 1 V;
T_amb = 25 °C; f = 1 GHz
Γ = Γ_opt; I_C = 1 mA; V_CE = 1 V;
T_amb = 25 °C; f = 1 GHz
Note
1. T_s is the temperature at the soldering point of the collector tab.
3
1
Top view
2
MSB003
Fig.1 SOT23.
MIN. TYP. MAX. UNIT
−
−
8
V
−
−
5
V
−
−
6.5 mA
−
−
32 mW
50 80
3.5 5
200
−
GHz
−
15 −
dB
−
1.8 −
dB
−
2
−
dB
December 1997
2