BFR30 Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel field-effect transistors

Philips Semiconductors
N-channel field-effect transistors
Product specification
BFR30; BFR31
handbook⁷, ^.h⁵alfpage
yfs
(mA/V)
5
2.5
MDA664
BFR31
BFR30
handbook,⁷h⁵alfpage
yos
(µA/V)
50
25
MDA665
BFR30
BFR31
0
0
2
4
6
ID (mA)
V_DS = 10 V; f = 1 kHz; T_amb = 25 °C.
Fig.11 Common source transfer admittance as a
function of drain current; typical values.
0
0
2
4
6
ID (mA)
V_DS = 10 V; f = 1 kHz; T_amb = 25 °C.
Fig.12 Common source output admittance as a
function of drain current; typical values.
10⁴
handbook, halfpage
|yos|
(µA/V)
10³
MDA666
10²
(1)
10
0
(2)
10
f = 1 kHz; T_amb = 25 °C.
(1) I_D = 4 mA. (2) I_D = 1 mA.
BFR30
BFR31
20
30
VDS (V)
Fig.13 Common source output admittance as a
function of drain-source voltage;
typical values.
1997 Dec 05
5
handbook, halfpage
Cis
(pF)
4
MDA667
3
2
1
0
0
−1
−2
−3
−4
−5
VGS (V)
V_DS = 10 V; f = 1 MHz; T_amb = 25 °C.
Fig.14 Input capacitance as a function of
gate-source voltage; typical values.
7