BFR30 Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel field-effect transistors

Philips Semiconductors
N-channel field-effect transistors
Product specification
BFR30; BFR31
handbook, h⁶alfpage
ID
(mA)
4
MDA661
VGS = 0 V
−0.5
2
−1.0
−1.5
−2.0
0
25
50
75
100 _{Tj (°C)} 125
BFR30.
V_DS = 10 V.
Fig.7 Drain current as a function of junction
temperature; typical values.
handbook, h⁶alfpage
ID
(mA)
4
VGS =
0V
−0.2
2
−0.4
−0.6
−0.8
−1
0
−1.2
25
50
MDA662
75
100
125
Tj (°C)
BFR31.
V_DS = 10 V.
Fig.8 Drain current as a function of junction
temperature; typical values.
10
handbook, halfpage
IGSS
(nA)
1
MDA656
10^−1
10^−2
10^−3
0
50
100
150
200
Tj (°C)
handbook,^−h⁶alfpage
VGS(off)
(V)
−4
MDA663
−2
BFR31
BFR30
0
0
2
4
6
8
10
IDSS (mA)
V_GS = −10 V; V_DS = 0.
Fig.9 Gate cut-off current as a function of junction
temperature; typical values.
I_D = 0.5 nA; V_DS = 10 V; V_GS = 0; T_j = 25 °C.
Fig.10 Gate-source cut-off voltage as a function of
drain current; typical values.
1997 Dec 05
6