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BFR30 Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel field-effect transistors
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Philips Semiconductors
N-channel field-effect transistors
Product specification
BFR30; BFR31
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
IGSS
IDSS
VGS
VGS
VGSoff
yfs
yfs
yos
yos
Cis
gate cut-off current
drain current
BFR30
BFR31
gate-source voltage
BFR30
BFR31
gate-source voltage
BFR30
BFR31
gate-source cut-off voltage
BFR30
BFR31
common-source transfer admittance
BFR30
BFR31
common-source transfer admittance
BFR30
BFR31
common source output admittance
BFR30
BFR31
common source output admittance
BFR30
BFR31
input capacitance
Crs
feedback capacitance
Vn
equivalent input noise voltage
CONDITIONS
MIN.
VDS = 0; VGS = −10 V
−
VGS = 0; VDS = 10 V
4
1
ID = 1 mA; VDS = 10 V
−0.7
0
ID = 50 µA; VDS = 10 V
−
−
ID = 0.5 nA; VDS = 10 V
−
−
ID = 1 mA; VDS = 10 V; f = 1 kHz;
Tamb = 25 °C
1
1.5
ID = 200 µA; VDS = 10 V; f = 1 kHz;
Tamb = 25 °C
0.5
0.75
ID = 1 mA; VDS = 10 V; f = 1 kHz
−
−
ID = 200 µA; VDS = 10 V; f = 1 kHz
−
−
VDS = 10 V; f = 1 MHz
ID = 1 mA
−
ID = 0.2 nA
−
VDS = 10 V; f = 1 MHz; Tamb = 25 °C
ID = 1 mA
−
ID = 200 µA
−
ID = 200 µA; VDS = 10 V;
−
B = 0.6 to 100 Hz
MAX. UNIT
−0.2 nA
10
mA
5
mA
−3
V
−1.3 V
−4
V
−2
V
−5
V
−2.5 V
4
mS
4.5
mS
−
mS
−
mS
40
µS
25
µS
20
µS
15
µS
4
pF
4
pF
1.5
pF
1.5
pF
0.5
µV
1997 Dec 05
4
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