BFR30 Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel field-effect transistors

Philips Semiconductors
N-channel field-effect transistors
Product specification
BFR30; BFR31
DESCRIPTION
Planar epitaxial symmetrical junction N-channel
field-effect transistor in a plastic SOT23 package.
APPLICATIONS
• Low level general purpose amplifiers in thick and
thin-film circuits.
PINNING - SOT23
PIN
SYMBOL
DESCRIPTION
1
d
drain⁽¹⁾
2
s
source⁽¹⁾
3
g
gate
Note
1. Drain and source are interchangeable.
handbook, halfpage
3
1
2
Top view
d
g
s
MAM385
Marking codes:
BFR30: M1p.
BFR31: M2p.
Fig.1 Simplified outline and symbol.
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_DS
V_GSO
P_tot
I_DSS
drain-source voltage
gate-source voltage
total power dissipation
drain current
BFR30
BFR31
y_fs
common-source transfer admittance
BFR30
BFR31
CONDITIONS
open drain
T_amb ≤ 40 °C
V_GS = 0; V_DS = 10 V
I_D = 1 mA; V_DS = 10 V; f = 1 kHz
MIN.
−
−
−
MAX.
±25
−25
250
UNIT
V
V
mW
4
10
mA
1
5
mA
1
4
mS
1.5
4.5
mS
1997 Dec 05
2