RX1214B350Y Datasheet, PDF (6/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
RX1214B350Y
List of components (see Fig.3)
COMPONENT
DESCRIPTION
L1, L2, L3
3 turns 0.65 mm diameter
copper wire
C1
capacitor
C2
tantalum capacitor
C3
electrolytic capacitor
C4
feedthrough bypass capacitor
C5
variable gigatrim capacitor
C6
capacitor
R1
resistor
VALUE
100 pF
10 µF, 50 V
470 µF, 63 V
0.8 - 8 pF
4.7 nF
4.7 Ω
DIMENSIONS
CATALOGUE NO.
int dia. = 4 mm;
length of turn = 3 mm
ATC, ref. 100B101KP50X
Erie, ref.1250-003
Tekelec, ref.729.1
The test jig consists of two circuits (input and output), each being 30 mm x 40 mm in size. The two circuits are mounted
on a 10 mm thick hard aluminium alloy block. A recess should be machined in the aluminium block in which the transistor
can be mounted. The mounting surface must be lapped to a surface roughness of Ra <0.5 µm and the sum of the depth
of the recess and the thickness of the circuits should not exceed the specified minimum dimension between mounting
face and the leads of the transistor. Tolerances on this dimension may be absorbed by placing a gold plated metal shim
under the leads, close to the body of the transistor.
handbook,¹h⁰alfpage
Gp
(dB)
8
MGA261
6
4
2
0
1.1
1.2
1.3
1.4
1.5
f (GHz)
Class C pulse operation; t_p = 130 µs; δ = 6%.
V_CC = 50 V; P_O = 280 W.
Broadband test circuit as shown in Fig.3.
Fig.4 Power gain as a function of frequency.
handbook,⁵h⁰alfpage
η_C
(%)
48
MGA260
46
44
42
40
1.1
1.2
1.3
1.4
1.5
f (GHz)
Class C pulse operation; t_p = 130 µs; δ = 6%.
V_CC = 50 V; P_O = 280 W.
Broadband test circuit as shown in Fig.3.
Fig.5 Collector efficiency as a function
of frequency.
1997 Feb 18
6