RX1214B350Y Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
RX1214B350Y
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_CES
V_EBO
I_C
P_tot
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
T_stg
storage temperature
T_j
operating junction temperature
T_sld
soldering temperature
Note
1. Up to 0.2 mm from ceramic.
CONDITIONS
open emitter
open base
R_BE = 0 Ω
open collector
t_p ≤ 130 µs; δ ≤ 6%
T_mb < 75 °C;
t_p ≤ 30 µs; δ ≤ 1%
t ≤ 10 s; note 1
MIN.
−
−
−
−
−
−
MAX.
65
20
65
3
25
750
UNIT
V
V
V
V
A
W
−65
200
°C
−
200
°C
−
235
°C
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Ptot
(W)
600
MGA259
400
200
0
–100
0
100
200
300
Tamb (^oC)
P_{tot max} = 750 W; t_p ≤ 30 µs; δ ≤ 1%.
Fig.2 Maximum power dissipation derating as a
function of mounting base temperature.
1997 Feb 18
3