RX1214B350Y Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
RX1214B350Y
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-mb}
R_{th mb-h}
Z_{th j-h}
thermal resistance from junction to mounting base T_j = 120 °C
thermal resistance from mounting base to heatsink note 1
thermal impedance from junction to heatsink
t_p = 130 µs; δ = 6%;
T_j = 110 °C; notes 1 and 2
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
MAX.
1.2
0.2
0.17
UNIT
K/W
K/W
K/W
CHARACTERISTICS
T_mb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
CONDITIONS
V_CB = 50 V; I_E = 0
V_EB = 1.5 V; I_C = 0
MAX.
30
3
UNIT
mA
mA
APPLICATION INFORMATION
Microwave performance up to T_mb = 25 °C in a common base test circuit as shown in Fig.3.
MODE OF
OPERATION
CONDITIONS
f
(GHz)
V_CC
(V)
note 1
P_L
(W)
Class C
t_p = 130 µs; δ = 6%; note 2 1.2 to 1.4
50
280
G_p
(dB)
≥7;
typ. 8
Notes
1. V_CC during pulse.
2. Operating conditions and performances for other pulse formats can be made available on request.
η_C
(%)
≥40;
typ. 44
1997 Feb 18
4