RX1214B350Y Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
RX1214B350Y
FEATURES
• Suitable for short and medium
pulse applications up to 1 ms/10%
• Internal input prematching
networks allow an easier design of
circuits
• Diffused emitter ballasting resistors
improve ruggedness
• Interdigitated emitter-base
structure provides high emitter
efficiency
• Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
• Multicell geometry improves power
sharing and reduces thermal
resistance.
QUICK REFERENCE DATA
Microwave performance up to T_mb = 25 °C in a common base class C
broadband amplifier.
MODE OF
OPERATION
CONDITIONS
f
(GHz)
V_CC
(V)
P_L
G_p
(W) (dB)
η_C
(%)
Class C
t_p = 130 µs; 1.2 to 1.4 50 280 ≥7 ≥40
δ = 6%
PINNING - SOT439A
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to flange
APPLICATIONS
Common base, class C, broadband,
handbook, 4 columns
1
pulsed power amplifiers for L-Band
radar applications in the
1.2 to 1.4 GHz band. Also suitable for
medium pulse, heavy duty operation
3
within this band.
DESCRIPTION
2
Top view
c
b
3
e
MAM045
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package with base connected to
flange.
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2