PSS8050 Datasheet, PDF (6/10 Pages) NXP Semiconductors – NPN medium power 25 V transistor

Philips Semiconductors
NPN medium power 25 V transistor
Product specification
PSS8050
400
handbook, halfpage
hFE
(1)
300
(2)
200
(3)
100
MLD952
010_−1
1
10
PSS8050D V_CE = 1 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
10²
10³
10⁴
IC (mA)
Fig.8 DC current gain as a function of collector
current; typical values.
1200
handbook, halfpage
VBE
(mV)
1000
(1)
800
(2)
600
(3)
400
MLD953
20010_−1
1
10
PSS8050D V_CE = 1 V.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
10²
10³
10⁴
IC (mA)
Fig.9 Base-emitter voltage as a function of
collector current; typical values.
10³
handbook, halfpage
VCEsat
(mV)
10²
10
MLD954
(1)
(2)
(3)
1400
handbook, halfpage
VBEsat
(mV)
1000
600
MLD956
(1)
(2)
(3)
1
10^−1
1
10
PSS8050D I_C/I_B = 10.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
10²
10³
10⁴
IC (mA)
Fig.10 Collector-emitter saturation voltage as a
function of collector current; typical values.
20010_−1
1
10
PSS8050D I_C/I_B = 10.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
10²
10³
10⁴
IC (mA)
Fig.11 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Aug 10
6