PSS8050 Datasheet, PDF (3/10 Pages) NXP Semiconductors – NPN medium power 25 V transistor

Philips Semiconductors
NPN medium power 25 V transistor
Product specification
PSS8050
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
in free air; note 2
in free air; note 3
VALUE
147
139
125
UNIT
K/W
K/W
K/W
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm².
3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
Operated under pulsed conditions: pulse width t_p ≤ 1 s; duty cycle δ ≤ 0.75%.
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_CEO
I_EBO
h_FE
V_CEsat
V_BEsat
V_BEon
f_T
C_c
collector-base cut-off current
V_CB = 35 V; I_E = 0
−
−
100 nA
V_CB = 35 V; I_E = 0; T_amb = 150 °C −
−
50
µA
collector-emitter cut-off current
V_CE = 25 V; I_B = 0
−
−
100 nA
emitter-base cut-off current
V_EB = 6 V; I_C = 0
−
−
100 nA
DC current gain
I_C = 5 mA; V_CE = 1 V
I_C = 800 mA; V_CE = 1 V
45
−
−
40
−
−
DC current gain
I_C = 100 mA; V_CE = 1 V
PSS8050C
120 −
200
PSS8050D
160 −
300
collector-emitter saturation voltage I_C = 800 mA; I_B = 80 mA
−
165 500 mV
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
I_C = 800 mA; I_B = 80 mA
I_C = 10 mA; V_CE = 1 V
I_C = 50 mA; V_CE = 10 V;
f = 100 MHz
−
−
−
−
100 −
1.2 V
1
V
−
MHz
collector capacitance
V_CB = 10 V; I_E = i_e = 0; f = 1 MHz −
−
10
pF
2004 Aug 10
3