PSS8050 Datasheet, PDF (4/10 Pages) NXP Semiconductors – NPN medium power 25 V transistor

Philips Semiconductors
NPN medium power 25 V transistor
Product specification
PSS8050
400
handbook, halfpage
hFE
300
(1)
200
(2)
100
(3)
MLD946
010_−1
1
10
PSS8050C V_CE = 1 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
10²
10³
10⁴
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
1200
handbook, halfpage
VBE
(mV)
1000
(1)
800
(2)
600
(3)
400
MLD947
20010_−1
1
10
PSS8050C V_CE = 1 V.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
10²
10³
10⁴
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
10³
handbook, halfpage
MLD948
VCEsat
(mV)
10²
(1)
(2)
(3)
10
10^−1
1
10
PSS8050C I_C/I_B = 10.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
10²
10³
10⁴
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
1400
handbook, halfpage
VBEsat
(mV)
1000
600
MLD950
(1)
(2)
(3)
20010_−1
1
10
PSS8050C I_C/I_B = 10.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
10²
10³
10⁴
IC (mA)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Aug 10
4