PSS8050 Datasheet, PDF (2/10 Pages) NXP Semiconductors – NPN medium power 25 V transistor

Philips Semiconductors
NPN medium power 25 V transistor
Product specification
PSS8050
FEATURES
• High total power dissipation
• High current capability.
APPLICATIONS
• Medium power switching and muting
• Amplification
• Portable radio output amplifier (class-B, push-pull).
DESCRIPTION
NPN transistor in a SOT54 (TO-92) plastic package.
PNP complement: PSS8550.
MARKING
TYPE NUMBER
PSS8050C
PSS8050D
MARKING CODE
S8050C
S8050D
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CEO
I_C
collector-emitter voltage
collector current (DC)
MAX. UNIT
25
V
1.5 A
PINNING
PIN
1
collector
2
base
3
emitter
DESCRIPTION
1
handbook, halfpage
2
3
MSB033
Fig.1 Simplified outline (SOT54).
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
T_stg
T_j
T_amb
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
T_amb ≤ 25 °C; note 2
T_amb ≤ 25 °C; note 3
MIN.
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
40
25
6
1.5
2
300
1
850
900
1
+150
150
+150
UNIT
V
V
V
A
A
mA
A
mW
mW
W
°C
°C
°C
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm².
3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed
conditions: pulse width t_p ≤ 1 s; duty cycle δ ≤ 0.75%.
2004 Aug 10
2