PHX2N60E Datasheet, PDF (6/8 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHX2N60E
Non-repetitive Avalanche current, IAS (A)
10
Tj prior to avalanche = 25 C
1
VDS
125 C
ID
0.1
1E-06
tp
PHP2N60E
1E-05
1E-04
1E-03
Avalanche time, tp (s)
1E-02
Fig.17. Maximum permissible non-repetitive
avalanche current (I_AS) versus avalanche time (t_p);
unclamped inductive load
Maximum Repetitive Avalanche Current, IAR (A)
10
1
Tj prior to avalanche = 25 C
125 C
0.1
0.01
1E-06
PHP2N60E
1E-05
1E-04
1E-03
Avalanche time, tp (s)
1E-02
Fig.18. Maximum permissible repetitive avalanche
current (I_AR) versus avalanche time (t_p)
December 1998
6
Rev 1.200