PHX2N60E Datasheet, PDF (3/8 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T_j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I_S
Continuous source current T_hs = 25˚C
(body diode)
I_SM
Pulsed source current (body T_hs = 25˚C
diode)
V_SD
Diode forward voltage
I_S = 2 A; V_GS = 0 V
t_rr
Reverse recovery time
I_S = 2 A; V_GS = 0 V; dI/dt = 100 A/µs
Q_rr
Reverse recovery charge
Product specification
PHX2N60E
MIN. TYP. MAX. UNIT
-
- 1.9 A
-
- 7.6 A
-
- 1.2 V
- 360 - ns
- 2.4 - µC
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_hs)
ID%
120
110
Normalised Current Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_hs); conditions: V_GS ≥ 10 V
10 ^{Drain current, ID (Amps)}
RDS(ON) ^{= VDS/ID}
1
DC
0.1
PHX1N60A
tp =
10 us
100us
1ms
10ms
100ms
0.01
10
100
Drain-source voltage, VDS (Volts)
1000
Fig.3. Safe operating area. T_hs = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Zth j-hs / (K/W)
1E+01
ZTHX43
0.5
1E+00 0.2
0.1
0.05
1E-01 ^0.02
P_D
tp
D
=
tp
T
0
1E-02
1E-07
1E-05
1E-03
t/s
T
t
1E-01
1E+01
Fig.4. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
December 1998
3
Rev 1.200