PHX2N60E Datasheet, PDF (5/8 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHX2N60E
1E-01 ^{ID / A}
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2%
typ
98 %
1E-04
1E-05
1E-06
0
1
2
3
4
VGS / V
Fig.11. Sub-threshold drain current.
I_D = f(V_GS); conditions: T_j = 25 ˚C; V_DS = V_GS
1000 ^{Capacitances, Ciss, Coss, Crss (pF)}
PHP1N60A
Ciss
100
Coss
10
Crss
1
1
10
100
1000
Drain-source voltage, VDS (V)
Fig.12. Typical capacitances, C_iss, C_oss, C_rss.
C = f(V_DS); conditions: V_GS = 0 V; f = 1 MHz
Gate-Source voltage, VGS (Volts)
20
ID = 2 A
240 V
120 V
15
PHP1N60A
VDD = 480 V
10
5
0
0
10
20
30
40
Gate charge, Qg (nC)
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); parameter V_DS
Switching times, td(on), tr, td(off), tf (ns)
1000
VDD = 300 V
RD = 150 Ohms
Tj = 25 C
100
td(off)
tr
10 ^tf
td(on)
PHP1N60A
1
0
20
40
60
80
100
Gate resistance, RG (Ohms)
Fig.14. Typical switching times; t_d(on), t_r, t_d(off), t_f = f(R_G)
1.15 ^{Normalised Drain-source breakdown voltage}
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
1.1
1.05
1
0.95
0.9
0.85
-100
-50
0
50
100
150
Tj, Junction temperature (C)
Fig.15. Normalised drain-source breakdown voltage;
V_(BR)DSS/V_{(BR)DSS 25 ˚C} = f(T_j)
10 ^{Source-drain diode current, IF(A)}
VGS = 0 V
8
150 C
6
PHP1N60A
Tj = 25 C
4
2
0
0
0.5
1
1.5
Source-Drain voltage, VSDS (V)
Fig.16. Source-Drain diode characteristic.
I_F = f(V_SDS); parameter T_j
December 1998
5
Rev 1.200