PHX2N60E Datasheet, PDF (4/8 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
ID, Drain current (Amps)
4
Tj = 25 C
3
2
PHP1N60A
10 V
20 V
6.5 V
6V
5.5 V
1
5V
VGS = 4.5 V
0
0
5
10
15
20
25
30
VDS, Drain-Source voltage (Volts)
Fig.5. Typical output characteristics.
I_D = f(V_DS); parameter V_GS
Drain-Source on resistance, RDS(ON) (Ohms)
12
PHP1N60A
5V
5.5 V
Tj = 25 C
10
6V
8
6.5 V _{10 V}
VGS = 20 V
6
4
2
0
0
1
2
3
4
Drain current, ID (Amps)
Fig.6. Typical on-state resistance.
R_DS(ON) = f(I_D); parameter V_GS
Drain current, ID (A)
5
VDS > ID x RDS(on)max
4
PHP1N60A
3
2
150 C
1
Tj = 25 C
0
0
2
4
6
8
10
Gate-source voltage, VGS (V)
Fig.7. Typical transfer characteristics.
I_D = f(V_GS); parameter T_j
Product specification
PHX2N60E
2 ^{Transconductance, gfs (S)}
VDS > ID x RDS(on)max
1.5
Tj = 25 C
1
150 C
PHP1N60A
0.5
0
0
1
2
3
4
5
Drain current, ID (A)
Fig.8. Typical transconductance.
g_fs = f(I_D); parameter T_j
a
Normalised RDS(ON) = f(Tj)
2
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 1 A; V_GS = 10 V
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 0.25 mA; V_DS = V_GS
December 1998
4
Rev 1.200