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| NPIC6C595_15 Datasheet, PDF (6/20 Pages) NXP Semiconductors – Power logic 8-bit shift register; open-drain outputs | |||
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NXP Semiconductors
NPIC6C595
Power logic 8-bit shift register; open-drain outputs
7.1 Test circuit and waveform
WORD
GENERATOR(1)
5V
15 V
7
MR
VCC
1
lD 30 Ω
15
SHCP
3-6,
1.5 mH
2
DS
DUT
11-14
Qn
VDS
ID
10
STCP
8
VDS
OE GND
16
tw(2)
tAL
5V
0V
lAL = 200 mA
V(BR)DSS = 33 V
min
aaa-002556
(1) The word generator has the following characteristics: tr, tf ï£ 10 ns; ZO = 50 ï.
(2) The input pulse duration (tW) is increased until peak current IAL = 200 mA. Energy test level is defined as:
EAS = IAL ï´ V(BR)DSS ï´ tAL/2 = 30 mJ.
Fig 9. Test circuit and waveform for measuring single-pulse avalanche energy
8. Recommended operating conditions
Table 4.
Symbol
VCC
VI
ID
Tamb
Recommended operating conditions
Parameter
Conditions
supply voltage
input voltage
drain current
pulsed drain output current;
VCC = 5 V; Tamb = 25 ï°C;
all outputs on
ambient temperature
[1] Pulse duration ï£ 100 ïs and duty cycle ï£ 2 %.
[2] This technique should limit Tj ï Tamb to 10 ï°C maximum.
Min
4.5
0
[1][2] -
Typ Max
- 5.5
- 5.5
- 250
ï40
- +125
Unit
V
V
mA
ï°C
9. Static characteristics
Table 5. Static characteristics
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
VCC = 5.0 V; Tamb = 25 ï°C
Min
Typ
Max
VIH
HIGH-level input VCC = 4.5 V to 5.5 V
voltage
0.85VCC
-
-
VIL
LOW-level input VCC = 4.5 V to 5.5 V
voltage
-
-
0.15VCC
VOH
HIGH-level
serial data output Q7S; VI = VIH or VIL
output voltage
IO = ï20 ïA; VCC = 4.5 V
IO = ï4 mA; VCC = 4.5 V
4.4
4.49
-
4.0
4.2
-
Unit
V
V
V
V
NPIC6C595
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 20 August 2012
© NXP B.V. 2012. All rights reserved.
6 of 20
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