BYC10DX-600_15 Datasheet, PDF (6/12 Pages) NXP Semiconductors – Hyperfast power diode

NXP Semiconductors
BYC10DX-600
Hyperfast power diode
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
V_F
forward voltage
I_R
reverse current
Dynamic characteristics
t_rr
reverse recovery time
I_RM
peak reverse recovery
current
V_FR
forward recovery voltage
Conditions
I_F = 10 A; T_j = 25 °C; see Figure 5
I_F = 10 A; T_j = 150 °C; see Figure 5
I_F = 20 A; T_j = 150 °C; see Figure 5
V_R = 500 V; T_j = 100 °C
V_R = 600 V
I_F = 1 A; V_R = 30 V; dI_F/dt = 50 A/µs;
T_j = 25 °C; see Figure 6
I_F = 10 A; V_R = 400 V; dI_F/dt = 500 A/µs;
T_j = 25 °C; see Figure 6
I_F = 10 A; V_R = 400 V; dI_F/dt = 500 A/µs;
T_j = 100 °C; see Figure 6
I_F = 10 A; V_R = 400 V; dI_F/dt = 50 A/µs;
T_j = 125 °C; see Figure 6
I_F = 10 A; dI_F/dt = 100 A/µs; T_j = 25 °C;
see Figure 7
Min Typ Max Unit
-
2
2.5 V
-
1.4 1.8 V
-
1.7 2.2 V
-
1.1 3
mA
-
9
200 µA
-
15
30
ns
-
18
-
ns
-
9.5 12 A
-
3
7.5 A
-
8
11
V
20
I_F
(A)
16
12
8
4
0
0
003aag300
(1)
(2)
(3)
1
2
3
V_F (V)
I_F
dl_F
dt
t_rr
Q_r
I_R
I_RM
time
25 %
100 %
003aac562
Fig 5. Forward current as a function of forward
voltage
Fig 6. Reverse recovery definitions; ramp recovery
BYC10DX-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 June 2011
© NXP B.V. 2011. All rights reserved.
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