BYC10DX-600_15 Datasheet, PDF (3/12 Pages) NXP Semiconductors – Hyperfast power diode

NXP Semiconductors
BYC10DX-600
Hyperfast power diode
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_RRM
V_RWM
V_R
I_F(AV)
I_FRM
I_FSM
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
DC
average forward current
square-wave pulse; δ = 0.5 ; T_h = 41 °C;
see Figure 1; see Figure 2
repetitive peak forward current
square-wave pulse; δ = 0.5 ; t_p = 25 µs;
T_h = 41 °C
non-repetitive peak forward current t_p = 10 ms; sine-wave pulse; T_j(init) = 25 °C;
see Figure 3
t_p = 8.3 ms; sine-wave pulse; T_j(init) = 25 °C;
see Figure 3
T_stg
storage temperature
T_j
junction temperature
Min Max Unit
-
600 V
-
600 V
-
500 V
-
10 A
-
20 A
-
65 A
-
71 A
-40 150 °C
-
150 °C
30
P_tot
(W)
20
10
0.2
0.1
003aag301
δ=1
0.5
0
0
5
10
15
I_F(AV) (A)
25
P_tot
(W)
20
15
10
5
0
0
003aag302
a = 1.57
1.9
2.2
2.8
4.0
2
4
6
8
10
I_F(AV) (A)
Fig 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYC10DX-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 June 2011
© NXP B.V. 2011. All rights reserved.
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