BYC10DX-600_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Hyperfast power diode

BYC10DX-600
Hyperfast power diode
Rev. 1 — 30 June 2011
Product data sheet
1. Product profile
1.1 General description
Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package.
1.2 Features and benefits
 Isolated plastic package
 Low reverse recovery current
 Low thermal resistance
 Reduces switching losses in
associated MOSFET
1.3 Applications
 Continuous Current Mode (CCM)
Power Factor Correction (PFC)
 Half-bridge/full-bridge switched-mode
power supplies
 Half-bridge lighting ballasts
1.4 Quick reference data
Table 1.
Symbol
V_RRM
I_F(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward current
Static characteristics
V_F
forward voltage
Dynamic characteristics
t_rr
reverse recovery time
Conditions
square-wave pulse;
δ = 0.5 ; T_h = 41 °C;
see Figure 1; see Figure 2
I_F = 10 A; T_j = 25 °C;
see Figure 5
I_F = 10 A; T_j = 150 °C;
see Figure 5
I_F = 10 A; V_R = 400 V;
dI_F/dt = 500 A/µs;
T_j = 25 °C; see Figure 6
Min Typ Max Unit
-
-
600 V
-
-
10 A
-
2 2.5 V
-
1.4 1.8 V
-
18 -
ns